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datasheet TLE6280GP 1 2007-07-19 3-phase bridge driver ic features ? compatible to very low ohmic normal level input n-channel mosfets ? separate input for each mosfet ? pwm frequency up to 30khz ? fulfills specification down to 9v supply voltage ? low emc sensitivity and emission ? separate source connection for each mosfet ? adjustable dead time ? adjustable di/dt limitation ? short circuit protection with adjustable current limitation ? driver undervoltage warning ? reverse polarity protection ? disable function ? input with ttl characteristics ? error flag ? thermal overload warning for driver ic ? shoot through protection ? shoot through option ? integrated bootstrap diodes ? green product (rohs compliant) ? aec qualified application ? dedicated for 3-phase high current motor bridges in pwm control mode. this device fulfills requirements in 12v automotive applications general description 3-phase bridge driver ic for mosfet power stages with multiple protection functions. block diagram product summary turn on current i oxx(on) 0.9 a turn off current i oxx(off) 0.85 a supply voltage range v vs 8...20 v gate voltage v gs 10 v temperature range t j -40...+150 c pg-dso36 input logic - shoot through option - charge pump control - programmable dead time error logic - short circuit shut down - under voltage warning - over temperature warning hs driver (channel 2) - short circuit protection - undervoltage detection - di/dt control ls driver (channel 2) - short circuit protection - undervoltage detection - di/dt control reverse polarity protection voltage regulator charge pump di/dt limitation hs driver 3 ls driver 3 hs driver 1 ls driver 1 vdh ch cl didt err dt mfp ilx ihx bh2 gh2 bl2 sh2 gl2 sl2 vs bh1gh1sh1bl1 gl1sl1 bh3 gh3 sh3 bl3 gl3 sl3 gnd - shoot through protection marking TLE6280GP
datasheet TLE6280GP 2 2007-07-19 application block diagram remark: this application diagram is one possible impl ementation of this driver ic. there is, e.g., the possibility to link all three blx pins and use only one capacitor. sh1 v s =12v c 1000f c di/dt 12nf c gh1 r q 50 k ? sh2 gh2 bh2 gl1 gl2 vs v cc err mfp r q 82 k ? il1 ih1 c bh1 220nf c bh2 220nf c vs 1f r vs 10 ? gnd bh1 sl1 sh3 gh3 bh3 c bh3 220nf sl2 gl3 sl3 di/dt r di/dt 100 ? r q 20 k ? v 5 =5v il2 ih2 il3 ih3 gnd ch cl c cp 1.5f vdh dt r dt 50 k ? bh3 c bl3 220nf bl2 c bl2 220nf bl1 c bl1 220nf TLE6280GP p-gnd p-gnd fig. 1 : application circuit
datasheet TLE6280GP 3 2007-07-19 pin symbol function 1;18;19:36 gnd logic ground 8 vs voltage supply 20 21 cl ch charge pump - capacitor 9 11 13 ih1 ih2 ih3 control inputs for high-side switches 1 to 3 (low active) 10 12 14 il1 il2 il3 control inputs for low-side switches 1 to 3 (high active) 15 mfp multi function pin: a) disable the complete device by v mfp <1v b) program pin for output voltage level under short circuit condition (v gxx ?v sxx = 2xv mfp ) c) enable shoot through option by v mfp >4.5v 17 dt program pin for dead time 35 didt program pin di/dt limitation 34 vdh sense pin for drain voltage of the high-side mosfets 16 err error flag for driver supply under voltage, over- temperature and short circuit (open drain output) 2 28 22 bh1 bh2 bh3 bootstrap supply high-side switches 1 to 3 5 31 25 bl1 bl2 bl3 backup capacitor connection low switches 1 to 3 3 29 23 gh1 gh2 gh3 output to gate high-side switches 1 to 3 6 32 26 gl1 gl2 gl3 output to gate low-side switches 1 to 3 4 30 24 sh1 sh2 sh3 connection to source high-side switches 1 to 3 7 33 27 sl1 sl2 sl3 connection to source low-side switches 1 to 3
datasheet TLE6280GP 4 2007-07-19 functional description general in the automotive sector there are more and more applications requiring high performance motor drives, such as electro-hydraulic or el ectric power steering. in these applications 3-phase motors, synchronous and asynchronous, ar e used, combining high output perform- ance, low space requirements and high reliability. the TLE6280GP is a driver ic dedicated to control the 6 to 12 external mosfets forming the converter for high current 3 phase motor drives in the automotive sector. it incorporates fea- tures like short circuit detection, diagnosis and high output performance and combines it with typical automotive specific requirements like full functionality even at low battery voltages. its 3 high-side and 3 low-side output stages are powerful enough to drive mosfets with 250nc gate charge with approx. 300ns fall and rise times. typical applications are cooling fan, water pump, electro-hydraulic and electric power steer- ing. the TLE6280GP is designed for a 12v power net. use in 24v application is possible as well. limiting factor could be the power dissipation. this datasheet describes all functionality of this device. additional application tips are given in an application note available on the internet. output stages the 3 low-side and 3 high-side pow erful push-pull output stages ar e all floating blocks, each with its own source pin. this allows the direct connection of the output stage to the source of each single mosfet, allowing a perfect control of each gate-source voltage even when 200a are driven in the bridge with rise and fall times clearly below 1s. all 6 output stages have the same output power and, due to the use of the bootstrap princi- ple, they can be switched all up to 30khz. its output stages are powerful enough to drive mosfets with 250nc gate charge with approx. 300ns fall and rise times, or even to run 12 such mosfets with fall and rise times of approx. 600ns. maximum allowed power dissipation and the need to refresh the bootstrap capacitors with a minimum refresh pulse limit the divice use for higher frequencies. fig. 2 shows the supply structure of TLE6280GP. the bootstrap capacitors are charged by the charge pump capacitor c cp via the ch pin and diodes. the exact value for this minimum refresh pulse is given by the rc time constant formed by the impedance between the ch pin and bxx pin, and the capacitor formed by the external mosfet (c mosfet =q gate-total / v gs ). the size of the bootstrap capacitor has to be adapted to the external mosfet that the driver ic has to drive. usually the bootstrap capacitor is about 10-20 times bigger than c mosfet . external components, such as r-c networks, at the vs pin have to be considered, too. operation at vs<12v ? integrated charge pump the TLE6280GP provides a feature tailored to the requirements of 12v automotive applica- tions. often the operation of an application has to be assured even at 9v-supply voltage or lower. normally bridge driver ics provide in such conditions clearly less than 9v to the gate of the external mosfet, increasing its rdson and associated the power dissipation. the supply structure of the device is shown in fig.2. the tle 6280gp has a built-in voltage regulator with charge pump control to generate an internal supply voltage of 13v within a supply voltage range of 8-40v. o peration below 8v is possible as well and will result in a re- duced gate voltage. the charge pump works with an external capacitor c cp connected be- tween the cl and ch pins. it provides more than 13v at the ch pin and guarantees high supply voltage for the bootstrap capacitors c bx .
datasheet TLE6280GP 5 2007-07-19 the input low-side pins ilx (see fig. 3) trigger the charge pump. as soon as the first exter- nal low-side mosfet is switched on and the corresponding bootstrap capacitor is connected to gnd, the c cp is pushed to high and provides about 13v at the ch pin. c cp can now di- rectly feed the low-side output stages and re charge the bootstrap capacitors connected to gnd. as soon as the first of the 3 external low-side mosfets is switched off, the c cp will be pulled down to be re-charged. this synchronous operation with the output stag es has the benefit that the electromagnetic emissions generated by the charge pump can be filtered by the same filter necessary to filter the eme of the converter itself. at the same time it is assured that the high voltage at the ch pin is available just in time to charge the high-side bootstrap. fig. 3: trigger timing of charge pump caused by changing input signals vreg1 13v +13 ... +8v ch cl bh 1 bh 2 bh 3 bl 1 bl 2 bl 3 vreg2=6v vreg3 = vreg1-8v triggered by ilx vs c cp c bh1 c bl1 phase a phase b phase c = pin bold line = external component c vs from battery r vs fig. 2: supply structure with external components (compare to fig. 1) il1 il2 ? timing of charge pump - examples 1 2 1. ilx high 1. ilx low il3 ch charge of bootstrap capacitors charge of charge pump capacitor il2 1. ilx high 1. ilx low ch charge of bootstrap capacitors il1 il3 charge of charge pump capacitor
datasheet TLE6280GP 6 2007-07-19 the size of the c bxx and c cp capacitors depends upon the gate charge of the mosfet. (see ?output stages?). c cp is usually 6 times larger then c bxx . dead time and shoot through option. in bridge applications it has to be assured that the external high-side and low-side mosfets are not ?on? at the same time, such that the battery voltage is directly connected to gnd. this is usually assured by the integration of delays in a driver ic, generating a so-called dead time between switching off the external mosfet and switching on the other mosfet of the same half-bridge. the dead times generated in the TLE6280GP are adjustable. the dead time generated by the TLE6280GP can be varied from 100ns to 4s by connecting an external resistor from the dt pin to gnd. the dead time has to be long enough to avoid a short between battery and gnd, while the dead time should be as short as possible to reduce extra power dissipation in the external mosfets. in addition to this adjustable delay, the TLE6280GP provides a locking mechanism, prevent- ing both external mosfets of one half-bridge from being switched on at the same time. this functionality is called shoot through protection. if the command to switch on both high and low-side switches in the same half-bridge is given at the input pins, the command will be ignor ed. (see dead time diagrams, fig. 6-8) this shoot through protection can be deactivated by setting the mfp-pin to 5v. short circuit protecti on / current limitation the TLE6280GP provides a short circuit protection for the external mosfets, by monitoring the drain-source voltage of the external mosfets. as soon as this voltage is higher than the short circuit detection limit, the gate-source voltage of this mosfet will be limited to twice the voltage at the mfp-pin, providing a current limitation. the short circuit detection level is dependent upon the voltage of the mfp pin as well (see diagrams). after a delay of about 11s all external mosfets will be switched off until the driver is reset by the mfp pin. the error flag is set. the drain-source voltage monitoring of the short circuit detection for certain external mos- fets is active as soon as the corresponding input is set to ?on? and the dead time is expired. this feature provides a 2-step switch-on behavior for each regular switching-on of a mosfet. description of mfp pin (multi functional pin) the mfp pin has multiple tasks: 1) reset the device. 2) adjust the short circuit detection level of the external mosfet and define the gate voltage limitation for current limitation in case of short circuit 3) deactivate the shoot-through protection fig 4. shows the internal structure of the mfp pin. condition of mfp pin function 0 ? 1.1v disable the driver. all external mosfets will be actively switched off 2.5 ? 4.0 v adjustable short circuit detection level combined with adjust- able gate voltage limitation for current limitation. shoot- through protection is active. > 4.5v shoot-through protection deactivated.
datasheet TLE6280GP 7 2007-07-19 shoot through protection / option as already mentioned, the device has a built-in shoot-through protection, to avoid a simulta- neous activation of high- and low-side switch in one half-bridge. in case there is a short circuit in the bridge, the driver will switch off all external mosfets. if there is still current flowing in the motor, it is possible for the user to override this shoot through protection. by setting the ilx to ?high?, the ihx to ?low? and mfp to a level above 4.5v, all external mos- fets will be turned on simultaneously to blow a well-dimensioned fuse. the application will be finally disconnected in this way from battery, and thus guarantee that the motor does not ap- ply any uncontrolled torque. undervoltage warning: if the voltage of a bootstrap capacitor c bxx reaches the undervoltage warning level the error flag is set and will remain set until the voltag e of the bootstrap capac itor has recovered. the error signal can be seen as awarning t hat an undervoltage shut-down could occur soon, and the user can take appropriate measures to avoid this. such measures could be the change of the duty cycle to a range of 10-90% or the ramp down of the motor. undervoltage shut down: the TLE6280GP has an integrated undervoltage shut-down, to guarantee that the behavior of the device is predictable in all voltage ranges. if the voltage of a bootstrap capacitor c bxx reaches the undervoltage shut-down level, the gate-source voltage of the affected external mosfet will be actively pulled to low. in this situation the short circuit detection of this output stage is deactivated to avoid a complete & & nand vmfp x 2 mfp shoot through 80ns 1.45 / 1.7v gate control 4.5v ihx ilx levelshifter dissable = reset fig. 4: block diagram of internal structure of mfp pin
datasheet TLE6280GP 8 2007-07-19 shut down of the driver. this allows continued operation of the motor in case of undervoltage shut-down for a short period of time. as soon as the bootstrap voltage recovers, t he output stage condition will be aligned to the input patterns by the next changing input signal at the corresponding input pin. diagnosis the err pin is an open collector output and has to be pulled up with external pull-up resis- tors to 5v. in normal conditions the err signal is high. in case of an error the err pin is pulled down. there are 3 different causes for an error signal: 1) short circuit of an external mosfet ? all external mosfets are switched off. the driver has to be reset to start again. 2) undervoltage warning: at least one of the external capacitors connected to bxx pins has a voltage below the warning level. 3) over-temperature warning: the device works normally but is out of the maximum ratings. immediate actions have to be ta ken to reduce the thermal load. the error flag will be re- moved when the driver reached temperatures below the over temperature warning level. di/dt control in all high current pwm applications, transient overvoltages and electro-magnetic emmisions are critical items. the di/dt regulation of the TLE6280GP helps to reduce transient overvolt- age as well as electro-magnetic emissions. each real bridge configuration has stray inductance in each half-bridge. when the mosfets in the bridge are switching and load current is flowing, the stray inductance together with the di/dt in the halfbridge causies transient over voltages. these transient overvoltages can be feed to the didt pin of the gate driver by a high pass filter. voltages exceeding 2 to 5v or ?2 to ?5v at this pin will strongly reduce the gate current of the actually switched mosfet, result- ing in an increased switching time in the miller plateau of the mosfet, and reducing the switching speed exactly and only in the critical area of the switching process. through this regulation over-voltages are reduced and a smoother di/dt in the bridge is obtained. for more detailed information please refer to application note. fig. 5: block diagram of err functionality or err iscp (vmfp) 3.3a 0.3a 10pf temperature sensor i undervoltage approx. 1s
datasheet TLE6280GP 9 2007-07-19 estimation of power dissipation within the driver ic the power dissipation within the driver ic is strongly dependent upon the use of the driver and the external components. nevertheless, a rough estimation of the worst case power dis- sipation is possible. worst case calculation is: p d = (q gate *n*const* f pwm + i vs(open) ) * v vs - p rgate with: p d = power dissipation in the driver ic f pwm = switching frequency q gate = total gate charge of used mosfet at 10v v gs n = number of switched mosfets const = constant considering some leakag e current in the driver and the power dissipa- tion caused by the charge pump (nominally = 2) i vs(open) = current consumption of driver without connected mosfets during switching v vs = voltage at vs p rgate = power dissipation in the external gate resistors this value can be reduced dramatically by the use of external gate resistors. recommended start up procedure to assure the driver to be active and functional, a special initialization procedure is required whenever the gate drive is enabled (v mfp is changed from lo to hi). every time the driver is enabled, after 10 s or later, positive-going transition signals at all ilx pins are required in or- der to ensure proper start-up of the output driver. this procedure assures a proper wake up the device and allowes to fill the bootstrap c apacitors. not filling the bootstrap capacitors might lead to low gate-source voltages mainly in highside and can cause a short circuit de- tection when the highside switches are activated. not changing the ilx input signal after enabling the device may cause the lowside outputs to stay in off conditions.
datasheet TLE6280GP 10 2007-07-19 maximum ratings parameter and conditions symbol values unit at t j = -40 ? +150 c, unless otherwise specified supply voltage 1 v s -4 ... 45v v operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c max. voltage range at ixx, mfp, dt; err -0.3 ...+7 v max. voltage range at slx 2 v slx -7 ...+7 v max. voltage range at shx 3 v shx -7 ...+45 v max. voltage range at glx 2 v glx -7 ...+18 v max. voltage range at ghx 3 v ghx -7 ...+55 v max. voltage range at bhx 3 v bhx -0.3 ...+55 v max. voltage range at vdh 4 v vdh -4 ...+55 v max. voltage difference bxx - sxx v bxx -v sxx -0.3 ...+15 v max. voltage difference gxx - sxx v gxx -v sxx -0.3...+11 v max. voltage range at cl v cl -0.3 ...+10 v max. voltage range at ch v ch -0.3 ...+18 v max. voltage range at didt v didt -7 ...+7 v power dissipation (dc) @ t c =125c p tot 1.2 w esd voltage (human body model) jesd22-a114-b @ all pins @ all pins excluding gxx v esd 1 2 kv din humidity category, din 40 040 e iec climatic category, din iec 68-1 40/150/56 jedec level 3 thermal resistance junction-case r thjc 5k/w 1 with external resistor ( 10 ? ) and capacitor ? see fig.1 2 the min value -7v is reduced to ?(vs - 0.5v) if vs<7.5v 3 the min value -7v is reduced to ?(v bhx -v shx -1v) if bootstrap voltages <8v 4 the min value -4v is increased to ?( v bhx - v shx ) if bootstrap voltages <4v
datasheet TLE6280GP 11 2007-07-19 functional range parameter and conditions symbol values unit at t j = -40 ? +150 c, unless otherwise specified supply voltage 567 v s 8 ... 20 v operating temperature range t j -40 ...+150 c duty cycle @ 20khz 678 vs>8v dc 0...95 % max. voltage range at ixx, err v ixx; v err -0.3 ...+7 v max. voltage range at mfp, dt 9 v mfp -0.3 ...+5 v max. voltage range at slx 2 v slx -7 ...+7 v max. voltage range at shx 3 v shx -7 ...+45 v max. voltage range at glx 2 v glx -7 ...+18 v max. voltage range at ghx 3 v ghx -7 ...+55 v max. voltage range at bhx 3 v bhx -0.3 ...+55 v max. voltage range at vdh 4 v vdh -4 ...+55 v max. voltage difference bxx - sxx v bxx -v sxx -0.3 ...+15 v max. voltage difference gxx - sxx v gxx -v sxx -0.3...+11 v max. voltage range at didt v didt -7 ...+7 v pwm frequency 10 f pwm 2...50 khz min. dead time resistor r dt 0k ? 5 operation above 20v limited by max allowed power dissipation and max. ratings 6 if all 3 half-bridges are switched with f pwm and a duty cycle <10%, undervoltage shut down can occur below vs=9.5v 7 total gate charge of the attached mosfet < 250nc 8 if the bootstrap capacitor is charged to v bhx -v shx =12v, the maximum duty cycle is 100% for 500 s 9 v mfp up to 7v allowed up to 500ms 10 limited only by the minimum bootstrap voltage (undervoltage logout of output stage) and the max allowed power dissipation
datasheet TLE6280GP 12 2007-07-19 electrical characteristics parameter and conditions symbol values unit at t j = ?40 ? +150 c, unless otherwise specified and supply voltage range v s = 8 ... 20v; f pwm = 20khz min typ max static characteristics low level output voltage (v gxx -v sxx ) @ i=10ma ? v ll -- 50 100 mv high level output voltage (v gxx -v sxx ) 7 @ i=-10ma ? v hl 8 10 11 v supply current at vs (device disabled) @ v bat =v s =14v r dt =400k ? v mfp =0v i vs(dis) -- -- 12 ma supply current at vs @ 20khz v mfp 4v (outputs open) i vs(open) -- 19 28 m low level input voltage v in(ll) -- -- 1.0 v high level input voltage v in(hl) 2.0 -- -- v input hysteresis ? v in 200 mv dynamic characteristics turn on current @ v gxx -v sxx = 0v; t j =25c @ v gxx -v sxx = 4v; t j =125c i gxx(on) -- -- 0.93 0.95 -- -- turn off current @ v gxx -v sxx = 10v; t j =25c @ v gxx -v sxx = 4v; t j =125c i oxx(off) -- -- 0.85 0.55 -- -- dead time ls @ r dt = 10 k ? t dt(ls) 160 240 330 ns dead time hs @ r dt = 10 k ? t dt(hs) 180 260 350 ns dead time (adjustable) @ r dt = 50 k ? @ r dt = 200 k ? @ r dt = 400 k ? @ r dt > 1 m ? t dt -- -- -- -- 1.2 3.9 4.1 2.2 -- -- -- -- s dead time @ r dt = 0 k ? @ t j = -40c @ t j = +25c @ t j = +150c t dt0k 20 25 45 55 70 110 125 130 200 ns rise time @ c load =22nf; r load =1 ? ; 20?80% v cload @ t j = -40c @ t j = +25c @ t j = +150c t rise -- -- -- 310 250 170 700 600 600 ns fall time @ c load =22nf; r load =1 ? ; 20?80% v cload @ t j = -40c @ t j = +25c @ t j = +150c t fall -- -- -- 220 250 200 400 350 350 ns
datasheet TLE6280GP 13 2007-07-19 electrical characteristics (continued) parameter and conditions symbol values unit at t j = ?40 ? +150 c, unless otherwise specified and supply voltage range v s = 8 ... 20v; f pwm = 20khz min typ max dynamic characteristics (continued) disable propagation time t p(dis) -- 350 700 ns wake up time after enabling the device t wu 10 s input propagation time (low on) t p(iln) -- 220 500 ns input propagation time (low off) t p(ilf) -- 180 500 ns input propagation time (high on) t p(ihn) -- 250 500 ns input propagation time (high off) t p(ihf) -- 185 500 ns input propagation time difference (all channels turn on) t pd(an) 20 55 70 ns input propagation time difference (all channels turn off) t pd(af) -- 11 50 ns input propagation time difference (one channel; high off ? low on) t pd(1hfln) -- 60 150 ns input propagation time difference (one channel; low off ? high on) t pd(1lfhn) -- 80 150 ns input propagation time difference (all channels; high off ? low on) t pd(ahfln) -- 60 150 ns input propagation time difference (all channels; low off ? high on) t pd(alfhn) -- 80 150 ns dc-resistance between ch and bxx pin i ch-bxx = 50ma; v vs = v bxx = gnd = 0v @ t j = -40c @ t j = +25c @ t j = +150c r ch-bxx -- 3.3 4.2 6.0 6.3 7.3 8.3 ? boostrap diode forward voltage i ch-bxx = 50ma @ t j = -40c @ t j = +25c @ t j = +150c v bsd -- 0.84 0.73 0.52 1.2 1.0 0.76 v
datasheet TLE6280GP 14 2007-07-19 electrical characteristics (continued) parameter and conditions symbol values unit at t j = ?40 ? +150 c, unless otherwise specified and supply voltage range v s = 8 ... 20v; f pwm = 20khz; v cbxx >7.5v min typ max diagnosis and pr otection functions undervoltage warning at err @ t j = -40c @ t j = +25c @ t j = +150c v bxx -v sxx 8 8 8 9.4 9.3 9.0 10 10 10 v undervoltage shut down of output stage @ t j = -40c @ t j = +25c @ t j = +150c v bxx -v sxx 5.5 5.0 4.0 7.2 6.6 5.6 7.5 7.2 7.2 v over-temperature warning 11 t j(ov) 150 170 190 c hysteresis for over-temperature warning ? t j(ov) 20 c short circuit protection shut down time delay t scp(off) 7 11 15 s short circuit criteria (v ds of mosfets) @ v mfp =3v 12 @ t j = -40c @ t j = +25c @ t j = +150c v ds(scp) 1.4 -- -- 1.85 1.90 1.95 -- -- 2.3 v factor between v mfp and max. v gxx @ 2v < v mfp < 4v v gxxmax /v mfp 1.8 2 2.27 disable input level v mfp(dis) -- -- 1.1 v enable input level 13 v mfp(en) 2.5 -- -- v disable input hysteresis ? v mfp(dis) -- 500 -- mv error level @ 1.6ma i err v err -- -- 1.0 v shoot through option shoot through protection activated v mfp 4v shoot through option activated v mfp 4.5 -- -- v 11 specified by design ? not subject to production test 12 periodic short circuit condition will be detected within several cycles, if the duty cycle is more than 10% 13 if the device is enabled, the slope of du (vmfp) /dt has to be higher than 3.5v/50s
datasheet TLE6280GP 15 2007-07-19 electrical characteristics (continued) parameter and conditions symbol values unit at t j = ?40 ? +150 c, unless otherwise specified and supply voltage range v s = 8 ... 20v; f pwm = 20khz; v cbxx >7.5v min typ max di /dt limitation non reaction level for di/dt limitation (100% gate driver capability) @ v didt >0v v didt 2 -- -- v non reaction level for di/dt limitation (100% gate driver capability) @ v didt <0v v didt -- -- -2 v max. v gxx at full reaction level for di/dt limitation @ v didt = -5v @ t j = -40c @ t j = +25c @ t j = +150c v gxx(didt) -- -- -- 1.9 2.3 3.4 3.0 3.0 4.2 v min. falltime at full reaction level for di/dt limitation @ v didt = +5v @ t j = -40c @ t j = +25c @ t j = +150c t fall (didt) 20 20 20 65 68 70 -- -- -- s impedance of didt pin to gnd 10khz datasheet TLE6280GP 16 2007-07-19 truth table input conditions output ilx ihx dt mfp uv ot sc glx ghx err 1 1 d >2.5v 0 0 0 1 0 5v 0 0 d >2.5v 0 0 0 0 1 5v 1 0 d 2.5-4.0v 0 0 0 a a 5v 0 1 d >2.5v 0 0 0 0 0 5v 0 0 d >2.5v 1 0 0 0 1 0v 1 1 d >2.5v 1 0 0 1 0 0v 1 0 d 2.5-4.0v 1 0 0 a a 0v 0 1 d >2.5v 1 0 0 0 0 0v 0 0 d >2.5v 0 1 0 0 1 0v 1 1 d >2.5v 0 1 0 1 0 0v 1 0 d 2.5-4.0v 0 1 0 a a 0v 0 1 d >2.5v 0 1 0 0 0 0v x x d >2.5v 0 0 1 0 0 b x x d <1.1v 0 0 x 0 0 5v x x d <1.1v 1 0 x 0 0 0v x x d <1.1v 0 1 x 0 0 0v x x d <1.1v 1 1 x 0 0 0v c c d >4.5v x x x 1 1 0v a) stays in the output condition prior to the shoot through input command (see also dead time diagrams) b) err=0v and stays latched until reset c) all 3 ilx=1 and all 3 ihx=0 (shoot through command) d) no influence on static results x) can be 0 or 1 remark: if 1.1v < vmfp < 2.5v the device is either working normally or is disabled. if 4.0v < vmfp < 4.5v the device is either working normally or will allow shoot through. definition: in this datasheet a duty cycle of 98% means that the glx pin is 2% of the pwm period in high condition. remark: please consider the influence of the dead time for your input duty cycle
datasheet TLE6280GP 17 2007-07-19 dead time diagrams: ghx t dt + t p(ihn) t p(ihf) glx t p(ilf) t dt + t p(iln) ilx+ihx t 90%v glx 10%v ghx 10%v glx 90%v ghx ghx t dt + t p(ihn) t p(ihf) glx t p(ilf) t dt ilx t ihx t p(iln) t < t dt t > t dt fig. 7: dead time generation when ihx and ilx are seperated fig. 6: dead time generation when ihx and ilx are tied together ghx t dt + t p(ihn) t p(ihf) glx t p(ilf) t dt + t p(iln) ilx t 90%v glx ihx fig. 8: dead time gereration and shoot through protection
datasheet TLE6280GP 18 2007-07-19 typ. dead time generation parameter: t junction fig. 9: typ. dead time internal generated fig. 10: typ. dead time internal generated - detail 0 0,5 1 1,5 2 2,5 0 102030405060708090100 r dt [kohm] 25c 150c -40c 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 0 100 200 300 400 500 600 700 800 900 1000 r dt [kohm] 25c 150c -40c
datasheet TLE6280GP 19 2007-07-19 typ. undervoltage shut down level typ. current consumpt ion of output stage conditions: vs=12v; measured with v(bhx=12v) and potentiometer between shx and gnd parameter: mfp voltage / t junction remark: the leakage current of the driver output stage is taken from the bootstrap capacitors c bx . when an external high-side mosfet is switched on, it is impossible to replace this current. the capacitor will be discharged as long as this mosfet stays on. the time until this output stage reaches the undervoltage shut-down can be determined by the size of the capacitor, the initial capacitor voltage, the leakage current taken out of this capacitor and the undervoltage lock-out level. 5 5,5 6 6,5 7 7,5 -40-200 20406080100120140 temperature [c] fig. 11: typ. undervoltage shut down (voltage of bootstra p ca p acitors ) 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 567891011 v(bxx)-v(sxx) [v] 2v 150c 4v 150c 5v 150c 2v 25c 4v 25c 5v 25c 2v -40c 4v -40c 5v -40c fig. 12: leakage current of driver output stages measured as cu r rent out of sh pin to gnd
datasheet TLE6280GP 20 2007-07-19 typ. boostrap voltage vs. duty cycle conditions: mosfet: 6x spb80n04s2-04; f pwm =20khz, vs=9v parameter: charge pump capacitor c cp / bootstrap capacitor c bx remark: the reachable duty cycle depends on the used pwm patterns. to achieve an even higher duty cycle, run it for some periods and reduce the duty cycle only for 1 period down to 90% to recharge the bootstrap capacitors. fig. 14: typ. bootstrap voltage v(bhx)-v(shx); duty cycle of 1 half-bridge = 0%; duty cycle of the other 2 halfbridges variable fig. 13: typ. bootstrap voltage v(bhx)-v(shx); duty cycle of 1 half-bridge = 50%; duty cycle of the other 2 halfbridges variable 0 2 4 6 8 10 12 14 0 102030405060708090100 duty cycle [%] 1.5f / 220nf 3f / 440nf 4.5f / 660nf 0 2 4 6 8 10 12 14 0 102030405060708090100 duty cycle [%] 1.5f / 220nf 3f / 440nf 4.5f / 660nf
datasheet TLE6280GP 21 2007-07-19 typ. short circuit detection level conditions: vs=12v parameter: t junction typ. gate voltage limitation during short circuit detection conditions: vs=12v; load at output: capacitor with 22nf; v(shx) = gnd; v(slx) = gnd; for hs (high-side output); short happens during on phase v(vdh)-v(shx)=3v; for ls (low-side output); short happens during on phase v(shx)-v(slx)=3v; parameter: t junction ; high-side (hs) or low-side (ls) output fig. 15: short circuit detection level 1,80 1,85 1,90 1,95 2,00 2,05 2,10 2,15 2,20 2 2,2 2,4 2,6 2,8 3 3,2 3,4 3,6 3,8 4 v(mfp) [v] hs 150c hs 25c hs -40c ls 150c ls 25c ls -40c fig. 16: factor between reduced gate voltage v(gxx) in case of short circuit and the volta g e at the mfp p in 1 1,2 1,4 1,6 1,8 2 2,2 2,4 2,6 2,8 3 2,533,544,55 mfp voltage [v] short circuit detection level [v] +150c +25c -40c
datasheet TLE6280GP 22 2007-07-19 typ. switching behavior conditions: vs=12v; vbb=12v; i load = 10a; v mfp =3.75v; r gate =1 ? ; r dt =10k ? ; c bxx =220nf; c cp =1,5f; one spb80n04 s2-04 per output with q g(total) = 135nc; measured: v(ds) 0 2 4 6 8 10 12 14 16 18 20 0 0,10,20,30,40,50,60,70,80,9 1 time [s] v(gs) v ( ds ) 0 2 4 6 8 10 12 14 00,20,40,60,811,21,4 time [s] v(gs) v ( ds ) fig. 17: typ. fall-time at 25c fig. 18: typ. rise-time at 25c fig. 19: rise- and fall-times vs. temperature t j 0 20 40 60 80 100 120 140 160 180 -40-200 20406080100120140 temperature tj [c] fall time rise time
datasheet TLE6280GP 23 2007-07-19 package package: pg-dso36-26 (all dimensions in mm) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020).
datasheet TLE6280GP 24 2007-07-19 TLE6280GP revision history: 2007-07-19 rev. 2.0 previous version: none page subjects (major changes since last revision) 1 aec qualified and rohs compliant logos and features added. package picture updated. ordering code deleted. marking code added. 23 package outline updated. paragraph rohs complaint added. 25 legal disclaimer updated.
datasheet TLE6280GP 25 2007-07-19 edition 2007-04-25 published by infineon technologies ag 81726 munich, germany ? 8/7/07 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or character- istics. with respect to any examples or hints given herei n, any typical values stated herein and/or any information regarding the application of the device, infineon technol ogies hereby disclaims any and all warranties and liabili- ties of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest in- fineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the fail- ure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other per- sons may be endangered.

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